Surface oxidation activates indium tin oxide for hole injection

By D. Milliron, Ian G. Hill, Chongfei Shen, A. Kahn, J. Schwartz. 2000

283 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c2ff2ae0bd1844365ba340ffad43d2c30c7a45e0

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In Electrical and Electronic Engineering

1. Weiran Cao
2. Youngkyoo Kim
3. Jian Li
4. Chang-Sik Ha
5. J. Xue
6. Hongzheng Chen

Citations in the corpus

• High-efficiency organic light-emitting diodes (2002, methodology): “Treating the ITO for 4 min in O plasma at 50 mW/cm can increase the work function from 4.2 eV up to 4.7 eV [ 6 ].”
• Polymers for flexible displays: From material selection to device applications (2008, methodology): “Surface treatment of the ITO anodes through oxidization by O2 plasma, CF4/O2 plasma, UV ozone treatment as well as acid and base treatment increases the work function nearly to 5 eV [189,190].”
• Transparent electrodes for organic optoelectronic devices: a review (2014, methodology): “Extensive work has been carried out to modify the ITO surface with various treatments, such as mechanical polishing, ion-beam sputtering, oxygen plasma, and UV-ozone or chemical treatments.(9,56,57) The work function (WF) of an electrode plays a critical role in determining the carrier (electron or ”