Investigation of structural and optoelectronic properties of BaThO3

By G. Murtaza, Iftikhar Ahmad, Bin Amin, A. Afaq, Muhammad Maqbool, J. Maqssod, I. Khan, M. Zahid. 2010

151 citations recorded by the source corpus.

Abstract Structural and optoelectronic properties of BaThO3 cubic perovskite are calculated using all electrons full potential linearized augmented plane wave (FP-LAPW) method. Wide and direct band gap, 5.7 eV, of the compound predicts that it can be effectively used in UV based optoelectronic devices. Different characteristic peaks in the wide UV range emerges mainly due to the transition of electrons between valance band state O-p and conduction band states Ba-d, Ba-f, Th-f and Th-d.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/c2f1476b9c9ab30d8d987f9ea184658ecfb53a69