p-type doping efficiency of MoO3 in organic hole transport materials

By S. Hamwi, Jens Meyer, T. Winkler, Thomas Riedl, Wolfgang Kowalsky. 2009

134 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/c2d057a361ca5e34a94cb28b0994abb45b1b0792

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jinsong Huang
2. Yong-bo Yuan
3. T. Kirchartz
4. Luca Bertoluzzi
5. Juan Bisquert
6. F. Rosei
7. N. Park
8. M. Graetzel

In Polymers and Plastics

1. Jinsong Huang
2. Yong-bo Yuan
3. Juan Bisquert
4. T. Kirchartz

Citations in the corpus

• Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion (2016, background): “The most promising candidates, including NiOx (Sato et al., 1993), MoO3 (Hamwi et al., 2009), indium doped SrTiO3 (Huang et al., 2016), and niobium doped SrTiO3 (Fukushima and Shibagaki, 1998), magnesium or aluminum doped ZnO (Karger and Schilling, 2005), as p- and n-type materials respectively are…”