High aspect ratio silicon etch: A review

By Banqiu Wu, Ajay Kumar, S. Pamarthy. 2010

709 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c287a5c991af15f594bf3d5ba18ffca157c736f5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Xiuling Li

In Electrical and Electronic Engineering

1. R. Dobbs
2. John H. Booske
3. Xiuling Li
4. C. Kory
5. Colin D. Joye
6. George R. Neil
7. Jaehun Park
8. R. Temkin

Citations in the corpus

• Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics (2012, background): “In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the…”
• Vacuum Electronic High Power Terahertz Sources (2011, methodology): “50 nm [178] using the Bosch process [179].”