Insulator to Semimetal Transition in Graphene Oxide
By G. Eda, C. Mattevi, H. Yamaguchi, HoKwon Kim, M. Chhowalla. 2009
605 citations recorded by the source corpus.
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator−semiconductor−semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c2055ce3d02ac33e3324d3f2deec7fccee4992df
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In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- Filippo Giubileo
- A. Castellanos-Gómez
In Materials Chemistry
- Kostas Kostarelos
- A. Di Bartolomeo
- Francesco Bonaccorso
- M. Prato
- A. Bianco
- Jonathan N. Coleman
- M. Chhowalla
- A. Castellanos-Gómez
Citations in the corpus
- ZnO decorated luminescent graphene as a potential gas sensor at room temperature (2012, background): “[38] Eda G, Mattevi C, Yamaguchi H, Kim H, Chhowalla M.”