Electronic properties of freestanding Ti3C2Tx MXene monolayers
By A. Miranda, J. Halim, Michel W. Barsoum, A. Lorke. 2016
218 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c1e485b3f316f1e0012a04eafddacc2b74e9fead
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Yury Gogotsi
- Husam N. Alshareef
- Michel W. Barsoum
- M. Lukatskaya
- Hyunho Kim
- Zhenwei Wang
- Mohamed Alhabeb
- P. Simon
In Materials Chemistry
- Yury Gogotsi
- Husam N. Alshareef
- Hyunho Kim
- Michel W. Barsoum
- Mohamed Alhabeb
- Zhenwei Wang
- M. Lukatskaya
- J. Rosen
Citations in the corpus
- MXetronics: Electronic and photonic applications of MXenes (2019, methodology): “IDS and VGS in a single-flake FET using SiO2 dielectric layer on p ++ Si gate.[100, 101] In contrast, the solution-gated Ti3C2Tx MXene FET showed an interesting V-shaped ambipolar”
- Effect of Synthesis on Quality, Electronic Properties and Environmental Stability of Individual Monolayer Ti3C2 MXene Flakes (2016, background): “It was found that MXenes’ surface chemistry,[5] conductivity,[3] capacitance,[4,6,7] and other properties are significantly affected by the synthesis method.”