A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology ☆

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Research Proposal for an Experiment to Search for the Decay $\mu \to eee$ (2013, methodology): “We propose to use the High Voltage MAPS design with the amplifier electronics completely implemented inside the deep pixel N-well, which was first proposed in [127] and since successfully tested [128,129], see also section 10.”
Charged Lepton Flavour Violation: An Experimental and Theoretical Introduction (2017, methodology): “The tracker consists of an ultra thin silicon pixel tracker, made possible by the High-Voltage Monolithic Active Pixel (HV-MAPS) technology [277, 278] built up by 50 μm silicon sensors glued to an 80 μm flexible printed circuit board and a 25 μm kapton support structure, for a total length of less t”
Displacement Damage in Silicon Detectors for High Energy Physics (2018, unknown): “The HV-CMOS process allows to apply high-bias voltages to the substrate of CMOS sensors and collect charges from deep n-wells in a p-type substrate [127].”
Technical design of the phase I Mu3e experiment (2020, methodology): “The MuPix sensors are monolithic pixel sensors in HVCMOS [22] technology.”