Hall effect in the extremely large magnetoresistance semimetal WTe2

By Yongkang Luo, H. Li, Y. Dai, H. Miao, Y. Shi, H. Ding, A. Taylor, D. Yarotski, R. Prasankumar, J. Thompson. 2015

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We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c191b479f3fb9fee8a1b41057d981ad3759d0dcc