Graphene nanomesh

By J. Bai, Xing Zhong, Shan Jiang, Yu Huang, Xiangfeng Duan. Nature Nanotechnology, 2010

671 citations recorded by the source corpus.

Graphene has significant potential for application in electronics1-5, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap6,7. Processing graphene sheets into nanoribbons with widths of less than 10nm can open up a bandgap that is large enough for room temperature transistor operation8-19, but nanoribbon devices often have low driving currents or transconductances18,19. Moreover, practical devices and circuits will require the production of dense arrays of ordered nanoribbons, which is of significant challenge20,21. Here we report the production of a new graphene nanostructure - which we call graphene nanomesh - that can open up a band gap in a large sheet of graphene to create a semiconducting thin film. The nanomeshes are prepared with block copolymer lithography and can have variable periodicities and neck widths down to 5 nm. Graphene nanomesh field-effect transistors can support currents nearly 100 times greater than individual graphene nanoribbon devices, and the on-off ratio - which is comparable with the values achieved in individual nanoribbon devices - can be tuned by varying the neck width. The block copolymer lithography approach used to make the nanomesh devices is intrinsically scalable and could allow for the rational design and fabrication of graphene-based devices and circuits with standard semiconductor processing.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c176f59ea4b32e9ca7b39cde1e66d81e3ab7f528

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Citations in the corpus

Outstanding strength, optical characteristics and thermal conductivity of graphene-like BC3 and BC6N semiconductors (2019, background): “the first one includes the band-gap opening in graphene via defect engineering, mechanical straining, nanomesh creation or chemical functionalization [11, 12, 13, 14, 15, 16, 17].”
Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles (2020, background): “During the last decade numerous techniques have been proposed for the band gap opening in graphene, like the formation of point defects [12–16], patterned cuts [17,18],”
Experimental Review of Graphene (2011, background): “However, experimental evidence of this gap has not been demonstrated. b. Nanomesh graphene Another novel way of inducing a bandgap in graphene is to pattern holes in a graphene sheet (Bai et al., 2010).”
Maximizing the right stuff: The trade-off between membrane permeability and selectivity (2017, methodology): “nanomesh having ~30-nm pores prepared via block copolymer lithography (115), (E) potassium ion”
Fracture of graphene: a review (2015, background): “for applications ranging from tuning graphene electrical properties (Bai et al. 2010), DNA sequencing (Merchant et al.”