Effect of nitrogen on band alignment in HfSiON gate dielectrics

By Ş. Sayan, N. Nguyen, J. Ehrstein, J. J. Chambers, M. Visokay, M. Quevedo-López, Luigi Pietro Maria Colombo, D. Yoder, I. Levin, D. Fischer and 3 more. 2005

450 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c160110f13ef9ede919493e35f2b13047f98d0d3