Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

By P. Vennégués, B. Beaumont, V. Bousquet, M. Vaille, P. Gibart. 2000

188 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/c07464c49379f9e52fb4e39957064503ce7e0705