Growth and transport properties of complementary germanium nanowire field-effect transistors

By Andrew B. Greytak, Lincoln J. Lauhon, M. Gudiksen, Charles M. Lieber. 2004

351 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c0529848820933bfcbb1cd64179c0190703aee87

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Wei Dang Lu
2. Ping Xie
3. David N. Seidman
4. Charles M. Lieber
5. Mikhail D. Lukin
6. F H L Koppens
7. Wei Cai
8. K. Kang

In Electrical and Electronic Engineering

1. Wei Dang Lu
2. Ping Xie
3. David N. Seidman
4. Charles M. Lieber
5. Mikhail D. Lukin
6. Wei Cai
7. K. Kang
8. Peidong Yang

Citations in the corpus

• Nanowire Transistor Performance Limits and Applications (2008, methodology): “wall deposition during the nanowire growth [35].”
• Three-Dimensional Atom-Probe Tomography: Advances and Applications (2007, methodology): “SEM: scanning electron microscope an entire nanowire-based device, such as the channel of a nanowire transistor (122), are well within the capabilities of this technique.”
• Near-field electrical detection of optical plasmons and single plasmon sources (2009, methodology): “The Ge NWs were synthesized using a vapor-liquid-solid chemical vapor deposition technique [ 29 ,30].”