Narrow-gap semiconductor photodiodes

By Antoni Rogalski, Manijeh Razeghi. Photonics West, 2000

211 citations recorded by the source corpus.

Subfields: Aerospace Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c01ee538ecfe44b9beb26d1551d5c7e8bb92d9b1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Aerospace Engineering

1. Antoni Rogalski
2. Baowei Fei
3. Guolan Lu

In Electrical and Electronic Engineering

1. J. Bullock
2. Kenneth B. Crozier
3. Ali Javey
4. Antoni Rogalski
5. Baowei Fei
6. Guolan Lu

Citations in the corpus

• Infrared detectors: an overview (2002, methodology): “Linear (240, 288, 480, and 960 elements), 2D scanning arrays with time delay and integration (TDI), and 2D staring formats from 32 32 up to 2048 2048 have been made [18].”
• Infrared detectors: status and trends (2003, methodology): “Initial demonstrations utilized ion implantation and LPE grown [91].”
• Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature (2018, background): “The majority of today’s commercially available, high performance IR photodetectors are made using III-V and II-VI absorbers, for example, In1-xGaxAs, InSb, and Hg1-xCdxTe.(3) While significant progress has”
• Quantum-dot infrared photodetectors: Status and outlook (2008, unknown): “These estimations are confirmed by experimental data [31,32].”