Quantum spin Hall effect in graphene.

By C. L. Kane, E. Mele. Physical Review Letters, 2004

5,611 citations recorded by the source corpus.

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bfd86fffcb34eeab20d7acdfb1ca6129b7d64007

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Citations in the corpus

The electronic properties of graphene (2007, background): “The intrin-si and extrinsi spin orbit intera tions an be writtenas (Dresselhaus and Dresselhaus, 1965; Kane and Mele,2005): HSO;int ≡ ∆so ∫ d2rΨ̂†(r)ŝz σ̂z τ̂zΨ̂(r) , HSO;ext ≡ λR ∫ d2rΨ̂†(r)(−ŝxσ̂y+ŝyσ̂xτ̂z)Ψ̂(r) ,(124)where σ̂ and τ̂ are Pauli matri es whi h des ribe the sub-latti e and valley…”
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “orbit coupling (Kane and Mele, 2005).”
Colloquium: Graphene spectroscopy (2014, background): “A small band gap in graphene can also be induced by a spin-orbit coupling of the Rashba type (Kane and Mele, 2005).”