Fast all-optical switching using ion-implanted silicon photonic crystal nanocavities
By Takasumi Tanabe, K. Nishiguchi, Akihiko Shinya, Eiichi Kuramochi, H. Inokawa, Masaya Notomi, K. Yamada, T. Tsuchizawa, Toshifumi Watanabe, H. Fukuda and 2 more. 2007
163 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/bf6d524fd7386ed6ad3f4c3a003cde9416f8d8a7
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Masaya Notomi
- Liam O'Faolain
- Toshihiko Baba
- Benjamin J. Eggleton
- Christelle Monat
- Christian Grillet
- Hon Ki Tsang
- Thomas F. Krauss
In Electrical and Electronic Engineering
- Masaya Notomi
- Liam O'Faolain
- Toshihiko Baba
- Y. Liu
- Benjamin J. Eggleton
- Christelle Monat
- Christian Grillet
- Hon Ki Tsang
In Materials Chemistry
Citations in the corpus
- Slow light in photonic crystals (2008, background): “The response time depends on the carrier recombination lifetime and diffusion and can be shorter than 1 ns (ref”
- Slow Light Enhanced Nonlinear Optics in Silicon Photonic Crystal Waveguides (2010, background): “to reduce free carrier lifetimes in silicon, such as reverse-biased p-i-n junctions [40] or ion implantation [41], [42] in order to improve nonlinear device speeds limited by free carriers.”
- Nonlinear optical properties of silicon waveguides (2008, methodology): “by applying a reverse bias [35] or reduce the carrier lifetime by ion implantation [31, 60]).”
- Manipulating light with strongly modulated photonic crystals (2010, background): “With OFF-to-ON switching, it was also reduced from 110 to 50 ps (figure 29(b)) [257].”