Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method

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Heat Transfer in Thermoelectric Materials and Devices (2013, methodology): “[225] applied the first-principles based Green’s function approach to investigate single interfaces between bulk 3D Si and Ge and found that the effects of interface roughness stemming from atomic mixing can even enhance the phonon transmittance due to a smoother transition of the density of states.”
Survey of ab initio phonon thermal transport (2018, background): “examine phonon-dislocation scattering and thermal transport in Si [208] and to describe conductance across interfaces in Si/Ge (including only mass variations) [128,129] and gold/alkane interfaces [209], as well as electron-phonon couplings in metal/ semiconductor interfaces TiS2/Si and CoSi2/Si (in”