Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

By T. Takano, Yoshinobu Narita, Akihiko Horiuchi, H. Kawanishi. 2004

137 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bec1ea59ecf2c4544ee8e14ef1a86a0a7ad399b0

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Citations in the corpus

• A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode (2008, background): “However, progress in developing short-wavelength electrically driven UV-LDs has been limited in recent years despite demonstrations of lasing and stimulated emission in the deep UV region from AlGaN and AlN layer under optically pumpin”