Doping dependence of the Raman peaks intensity of graphene close to the Dirac point

By Cinzia Casiraghi. 2009

173 citations recorded by the source corpus.

Here we use pristine graphene samples in order to analyze how the Raman peaks intensity, measured at 2.41 and 1.96 eV excitation energy, changes with the amount of doping. The use of pristine graphene allows investigating the intensity dependence close to the Dirac point. We show that the G peak intensity is independent on the doping, while the 2D peak intensity strongly decreases for increasing doping. Analyzing this dependence in the framework of a fully resonant process, we found that the total electron-phonon scattering rate is similar to 40 meV (60 ps(-1)) at 2.41 eV.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/be8708009e840446016f4db06f89c68aa0a8176d

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Raman characterization of defects and dopants in graphene (2015, background): “Therefore, by tuning EF and measuring the integrated intensity of the 2D band, the electron–phonon scattering rate, γep, can be determined [76].”
Growth of Epitaxial Graphene: Theory and Experiment (2014, background): “Polarized light is useful in identifying the nature of the edges of graphene flakes [123].”
Transfer of CVD-grown monolayer graphene onto arbitrary substrates. (2011, background): “with the increase of the integrated 2D to G intensity ratio describedabove.(54,55)Wealsonote that the increaseof the”
Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “The type of graphene edges of flakes can be recognized by using polarized light [48].”