Photonic Damascene process for integrated high-Q microresonator based nonlinear photonics

By Martin Hubert Peter Pfeiffer, A. Kordts, Victor Brasch, M. Zervas, M. Geiselmann, John D. Jost, Tobias J. Kippenberg. 2015

297 citations recorded by the source corpus.

High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN microresonators with anomalous group velocity dispersion has enabled broadband nonlinear optical frequency comb generation. Such frequency combs have been successfully applied in coherent communication and ultrashort pulse generation. However, the reliable fabrication of high confinement waveguides from stoichiometric, high stress SiN remains challenging. Here we present a novel photonic Damascene fabrication process enabling the use of substrate topography for stress control and thin film crack prevention. With close to unity sample yield we fabricate microresonators with 1.35 mu m thick waveguides and optical Q-factors of 3.7 x 10(6) and demonstrate single temporal dissipative Kerr soliton based coherent optical frequency comb generation. Our newly developed process is also interesting for other material platforms, photonic integration, and mid-infrared Kerr comb generation. (C) 2016 Optical Society of America

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/be52a9fb30077e65f9bec55ea273b34b1233c917

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Silicon Nitride in Silicon Photonics (2018, methodology): “The MESA+ Institute for Nanotechnology using inverted slot designs for waveguides up to 900 nm in thickness [41] and Kippenberg’s group at EPFL developed the photonic Damascene process [42] for core thickness up to 1.”
Dissipative Kerr solitons in optical microresonators (2018, background): “The platforms inwhich solitons can be generated have been extended significantly and include platforms that are amenable to wafer-scale processing, such as silica microdisk resonators (17) and photonic integrated platforms, notably Si3N4 (19, 20, 95, 96).”
RF Photonics: An Optical Microcombs’ Perspective (2018, methodology): “introducing mechanical trenches [92] or using a photonic damascene process based on substrate topography [93] have also been proposed and used to achieve Si3N4 film thicknesses of”
Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, unknown): “Thick SiN LPCVD layers can be deposited by increasing the silicon content in SiN (the so called Silicon rich SiN) [40], by using the thermal cycling process [39] or by using the Damascene process [41].”
Review of Silicon Photonics Technology and Platform Development (2021, methodology): “the damascene process, similar to the dense filler pattern surrounding the waveguides [75], and mechanical trenches process [79] were developed.”