A low-temperature order-disorder transition in Cu2ZnSnS4 thin films

By J. Scragg, L. Choubrac, A. Lafond, T. Ericson, C. Platzer‐Björkman. 2014

353 citations recorded by the source corpus.

Cu2ZnSnS4 (CZTS) is an interesting material for sustainable photovoltaics, but efficiencies are limited by the low open-circuit voltage. A possible cause of this is disorder among the Cu and Zn cations, a phenomenon which is difficult to detect by standard techniques. We show that this issue can be overcome using near-resonant Raman scattering, which lets us estimate a critical temperature of 533 ± 10 K for the transition between ordered and disordered CZTS. These findings have deep significance for the synthesis of high-quality material, and pave the way for quantitative investigation of the impact of disorder on the performance of CZTS-based solar cells.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/be2ba47ec7fb6585a995dabe151cb48c1f2c56e0

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In Electrical and Electronic Engineering

  1. X. Hao
  2. Martin A. Green
  3. Fang-yang Liu
  4. H. Cui
  5. Yu Feng
  6. G. Conibeer
  7. Xiaolei Liu
  8. David B. Mitzi

In Materials Chemistry

  1. Martin A. Green
  2. X. Hao
  3. Fang-yang Liu
  4. H. Cui
  5. Yu Feng
  6. G. Conibeer
  7. Xiaolei Liu
  8. O. Hansen

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