Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy

By K. Okamoto, I. Niki, Axel Scherer, Y. Narukawa, T. Mukai, Y. Kawakami. 2005

355 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/080768ab075912ff77daa806316e1f8c588ea680

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In Atomic and Molecular Physics, and Optics

1. A. I. Zhmakin

In Condensed Matter Physics

1. A. I. Zhmakin

In Electronic, Optical and Magnetic Materials

1. A. I. Zhmakin

Citations in the corpus

• Surface plasmon enhanced light emission from CdSe quantum dot nanocrystals (2006, methodology): “[2] We believe that this SP enhanced technique can be applied not only to InGaN-based materials but also to various materials that suffer from low quantum efficiencies.”
• Enhancement of light extraction from light emitting diodes (2011, background): “The effect of the QW-SP coupling is more significant than the enhancement of the InGaN emission observed in the semipolar GaInN/GaN LED with reduced piezoelectric field [612] or in the piezoelectric-free QW grown onM-plane of GaN substrate [613] and depends on the emission wavelength, being stronger”