Efficiency enhancement of Cu(In,Ga)Se2 solar cells due to post-deposition Na incorporation
By D. Rudmann, A. D. Cunha, M. Kaelin, F. Kurdesau, H. Zogg, A. Tiwari, G. Bilger. 2004
313 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/bda98ac6f7fb2c6dea652fefbc1a3bcc385ebffd
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In Electrical and Electronic Engineering
- Rakesh Agrawal
- H. Hillhouse
- A. Tiwari
- I. Repins
- Qijie Guo
- Grayson M. Ford
- Thomas Feurer
- David B. Mitzi
In Materials Chemistry
Citations in the corpus
- CIGS absorbers and processes (2010, background): “introduced by diffusion from Na-compound precursor layers, such as Na2Se or NaF, deposited during or prior to CIGS growth [42,45], or after CIGS growth in an annealing process [46].”
- Progress in thin film CIGS photovoltaics – Research and development, manufacturing, and applications (2017, methodology): “Such a PDT treatment was originally found to be the most beneficial method to add Na onto CIGS grown at low-temperature on plastic substrate [57], because it allows separating the influence of Na on CIGS film growth from its beneficial effect on electronic properties.”
- Ink formulation and low‐temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se)2 solar cells from sulfide nanocrystal inks (2013, background): “concentration with NaCl treatment is surprising as the addition of Na has correlated to increased carrier concentrations in numerous reports [19,21].”