Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

By Fengnian Xia, D. Farmer, Yu-ming Lin, Phaedon Avouris. Nano letters (Print), 2010

1,246 citations recorded by the source corpus.

Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) cannot be turned off effectively due to the absence of a band gap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a band gap up to a few hundred millielectronvolts can be created by the perpendicular E-field in bilayer graphenes. Although previous carrier transport measurements in bilayer graphene transistors did indicate a gate-induced insulating state at temperatures below 1 K, the electrical (or transport) band gap was estimated to be a few millielectronvolts, and the room temperature on/off current ratio in bilayer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively, in our dual-gate bilayer graphene FETs. We also measured an electrical band gap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V nm(-1), respectively. This demonstration reveals the great potential of bilayer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bd9798a0fb38e1967e61416deebc4b4cda34ed8a

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Citations in the corpus

Nanomaterials in transistors: From high-performance to thin-film applications (2015, background): “efforts have been made to induce a band gap in graphene (16, 17), but to date, they lack prac-”
Graphene Photonics, Plasmonics, and Optoelectronics (2014, background): “electric field perpendicular to the graphene sheets opened a bandgap in Bernal-stacked bilayer graphene [107], [108].”
Structural defects in graphene. (2011, background): “The electronic properties of a bilayer might be superior to monolayer graphene because a nonzero bandgap can be created.(79,80) Although defects can exist in both layers independently, there is a tendency to form covalent interlayer bonds when adatoms are located between the layers.”
Fracture of graphene: a review (2015, background): “…play important to critical roles include flexible electronics (Eda et al. 2008; Kim et al. 2009), field effect transistors (Novoselov et al. 2004; Xia et al. 2010), nanomechanical resonators (Bunch et al. 2007), DNA sequencing (Merchant et al. 2010; Schneider et al. 2010), gas separation (Koenig…”
Colloquium: Graphene spectroscopy (2014, background): “Recent transport studies (Xia et al., 2010) however demonstrate transport gaps closer to those obtained through IR spectroscopy.”