Growth kinetics and crystal structure of semiconductor nanowires
By V. Dubrovskii, N. Sibirev, J. Harmand, F. Glas. 2008
275 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/bd3ea970fc4d54e69408ec56890bd4eb12fec0fa
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In Atomic and Molecular Physics, and Optics
In Biomedical Engineering
In Electrical and Electronic Engineering
Citations in the corpus
- Doping of semiconductor nanowires (2011, background): “showed that GaP NWs can exhibit ZB segments with rotational twins [58], and NW polytypism has lately become an intense field of research [43, 50, 59].”
- Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism (2011, methodology): “Here, it is clear that high supersaturation favors WZ, whereas lower supersaturation results in ZB structure [61].”
- III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “[55] with subsequent elaborations [56–61], as being caused by preferred nucleation at the VLS triple phase line.”