Optical Processes In Semiconductors
By Leon Hirsch. 2016
870 citations recorded by the source corpus.
View Paper: https://www.semanticscholar.org/paper/bd1beb99953213808fbd97d2c22b426013cac61a
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- C. Hages
- Erkan Aydin
- M. Morales-Masis
- Xinbo Yang
- C. Miskin
- Sergej Levcenco
- En Cao
- Rakesh Agrawal
Citations in the corpus
- Tutorial: Defects in semiconductors—Combining experiment and theory (2016, unknown): “47 In addition, electrons can be excited from or to defect levels.”
- Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses (2015, methodology): “Band gaps were derived by assuming dominant collection in the space charge region, W, according to EQE≈ 1—Exp[ αW], and a direct gap absorption coefficient α ∝ (E-EG) [16,27].”
- Exciton-plasmon coupling interactions: from principle to applications (2017, background): “According to the local electric field, it is proportional to the absorption of the semiconductor [199].”
- Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells (2019, background): “[13,31] DFT calculations revealed that Zr-doping enlarges the bandgap to 1.01 eV from 0.92 eV, suggesting that increased bandgap of the films might be due to the combined effect of promoted crystallinity and the Moss–Burstein shift observed for doped In 2 O 3 films.”
- Control of the shape and size of iron oxide (α-Fe2O3) nanoparticles synthesized through the chemical precipitation method (2017, background): “Hematite has a direct band gap (n = 2) [45].”