High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire
By K. Reddy, Andrew D. Gledhill, Chun-Hu Chen, Julie M. Drexler, N. Padture. 2010
138 citations recorded by the source corpus.
The current method of growing large-area graphene on polycrystalline Cu surfaces (foils or thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire [α-Al2O3(0001)] substrates for transfer to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/bca576510f4390c1b8f865f883dcb7fb23be596f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- G. Chiarello
- A. Politano
Citations in the corpus
- Probing the Young’s modulus and Poisson’s ratio in graphene/metal interfaces and graphite: a comparative study (2015, background): “Graphene has been grown on different transition metal substrates: Pt(111)[14], Ni(111)[15], Ru(0001)[16], Ir(111)[17], Rh(111)[18], Pd(111)[19], Re(0001)[20], Cu(111)[21], and Co(0001)[22].”