Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids

By Jiuren Zhou, G. Han, Qinglong Li, Yue Peng, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Qingqing Sun, David-Wei Zhang, Y. Hao. International Electron Devices Meeting, 2016

143 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bbebcd9c9930e0ea12f8a56631d58e77568ee8a2