Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation

By K. Emtsev, Alexei Zakharov, C. Coletti, S. Forti, U. Starke. 2011

162 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/bb148022cdca16bc1a498ac2103f27afb250466d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. T. Iakimov

In Materials Chemistry

1. T. Iakimov
2. Rositsa Yakimova
3. G. Yazdi

Citations in the corpus

• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “germanium [119] intercalation at high temperatures can transform the buffer layer into a graphene layer with improved electrical properties compared to normal ML graphene which exists on the buffer layer [120].”