Graphene oxidation: thickness-dependent etching and strong chemical doping.

By Li Liu, S. Ryu, Michelle Tomasik, E. Stolyarova, Naeyoung Jung, M. Hybertsen, M. Steigerwald, L. Brus, G. Flynn. Nano letters (Print), 2008

834 citations recorded by the source corpus.

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single-layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O 2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of approximately 0.5 eV. These oxygen species desorb partially in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O 2 atmosphere at room temperature. This strongly doped graphene is very different from "graphene oxide" made by mineral acid attack.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ba85952aba560547393c871c4676dc7504b6fc73

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In Electrical and Electronic Engineering

1. T. Yu
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In Materials Chemistry

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Citations in the corpus

• Strong oxidation resistance of atomically thin boron nitride nanosheets. (2014, background): “relate to increased roughness (or surface curvature) and possible bonding distortions in BN nanosheets, both of which can give rise to lower activation energy for oxidation.(15) The bulk hBN, on the other hand, does not seem to be affected by the repeated heating.”
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