Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

By Jifeng Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, Jürgen Michel, Lionel C. Kimerling. 2005

228 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ba4ca56fb241972c1e2c6337cbeac8b9e703198e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Goran Z. Mashanovich
2. John E. Bowers
3. D. Thomson
4. D. Marris‐Morini
5. Graham T. Reed
6. Laurent Vivien
7. Po Dong

In Materials Chemistry

1. John E. Bowers

Citations in the corpus

• Roadmap on silicon photonics (2016, background): “Without temperature variation the 1 dB wavelength bandwidth of link penalty for the device demonstrated in reference [4] is 35 nm.”