Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

By Y. Xi, J. Xi, T. Gessmann, J. M. Shah, Jong Kyu Kim, E. Fred Schubert, A. Fischer, M. Crawford, K. Bogart, A. Allerman. 2005

193 citations recorded by the source corpus.

The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate (±3°C). A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6K∕W is obtained with the device mounted with thermal paste on a heat sink.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/b9a959b7994c8e908a28f5f2ad594adf02064220