Transition layers at the SiO2∕SiC interface

By T. Zheleva, A. Lelis, G. Duscher, Fude Liu, I. Levin, M. Das. 2008

149 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b8690201cb51057dbc2eb67826512a3bfce7886f

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1. Yong Kang
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3. Lubin Han
4. Yufeng Qiu

Citations in the corpus

• A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications (2021, background): “The trap density of SiC/SiO2 interface is one or two orders of magnitude of that of Si/SiO2 interface due to the extra carbon clusters [38].”