Enhanced piezoelectricity and modified dielectric screening of two-dimensional group-IV monochalcogenides

By L. C. Gomes, A. Carvalho, A. C. Castro Neto. 2015

156 citations recorded by the source corpus.

We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static permittivity, besides acquiring a dependence on the interlayer distance, is comparatively higher than in the 3D system. In contrast, it is found that elastic properties are little changed by the lower dimensionality. Poisson ratio relating in-plane deformations are close to zero, and the existence of a negative Poisson ratio is also predicted for the GeS compound. Finally, the monolayers shows piezoelectricity, with piezoelectric constants higher than that recently predicted to occur in other 2D-systems, as hexagonal BN and transition metal dichalcogenide monolayers.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b823b50d092a60fe3b774f2539c47caa71dc2e74

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

In Materials Chemistry

Citations in the corpus

2D materials and van der Waals heterostructures (2016, background): “As a consequence, they feature spin-orbit splitting (19 to 86 meV) (40) and piezoelectricity with large coupling between deformation and polarization change in plane (with piezoelectric coefficients e33 ranging from 7 × 10 to 23 × 10 C/m, largely exceeding those of MoS2 and hBN) (41).”