Monolithic transformers for silicon RF IC design

By J. Long. IEEE Journal of Solid-State Circuits, 2000

671 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b7b6004fc2c9d05ff566799235794f519f28b3d2

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In Electrical and Electronic Engineering

1. Ali Hajimiri
2. Scott D. Kee
3. Ichiro Aoki
4. David B. Rutledge
5. David J. Perreault
6. I. Bahl
7. Juan Rivas
8. John S. Shafran

Citations in the corpus

• Distributed active transformer-a new power-combining and impedance-transformation technique (2002, methodology): “Unfortunately, these on-chip components using CMOS processes are very lossy due to the low substrate resistivity and high metal ohmic loss [12], [15] and, therefore, they significantly degrade the output power and efficiency of the amplifier.”
• Substrate effects in monolithic RF transformers on silicon (2002, background): “Even though transformers built over conductive silicon [1]–[5] are expected to be prone to substrate losses, like spiral inductors on silicon [6], this effect has not been discussed yet extensively.”