Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

By Xuechao Yu, S. Zhang, Haibo Zeng, Qi Jie Wang. 2016

164 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b67372b805e005510319f2f59350f691604d4fc7

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1. R. Zhao
2. G. Anderson
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5. G. Sumanasekera
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7. M. Akhtar

Citations in the corpus

• Recent advances in synthesis, properties, and applications of phosphorene (2017, background): “Experimentaly, first in-plane p-p junctions have recently been fabricated using chemical doping and its considerable performance has been shown.(66) Due to the lone electron pair on each phosphorus atom in phosphorene, it is also a very promising material for gas sensing applications.”