Design and performance of a THz emission and detection setup based on a semi-insulating GaAs emitter

By G. Zhao, R. Schouten, N. V. Valk, W. Wenckebach, P. Planken. 2002

241 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Spectroscopy

View Paper: https://www.semanticscholar.org/paper/b61525905c03999dd82c6764259f4d09c187e556

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. R. Miles
2. Fabian Friederich
3. Mira Naftaly
4. K. Reimann
5. Julien Perruisseau-Carrier

In Spectroscopy

1. R. Miles
2. Mira Naftaly
3. Julien Perruisseau-Carrier

Citations in the corpus

• Terahertz Time-Domain Spectroscopy for Material Characterization (2007, methodology): “The emitter was fabricated on semi-insulating GaAs with an attached silicon hyperhemispherical lens [ 9 ].”
• THz Active Imaging Systems With Real-Time Capabilities (2011, background): “To put this value further into perspective, we note that a high-repetition-rate fs Ti:sapphire laser can generate THz pulses with an average power of 40 [40], [41] corresponding to a peak power of about 400 mW which, when focused, provides a field amplitude of the order of 100 V/cm.”