Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

By Z. Zhong, Fang Qian, Deli Wang, Charles M. Lieber. 2003

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ZnS nanostructures: From synthesis to applications (2011, methodology): “The measured hole mobility is comparable with the conventional nanomaterials such as p-type ZnO nanowires (10–17 cm(2) V 2 s (1)) and p-type GaN nanowires (12 cm(2) V 2 s (1)) [392,393].”
SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, background): “Compositionally modulated (heterostructure) nanowires that feature internal p-n junctions have enabled the development of single-nanowire LEDs and other devices.”
Electronic properties of silicon nanowires (2005, background): “NWs are synthesized from a range of different materials [1], such as CdS and ZnS [2], GaN [3], p-GaN [4], Si, Ge [5], [6], or InP [7], [8].”
Challenges and prospects of nanopillar-based solar cells (2009, background): “[8] Zhong, Z.”