Epitaxial graphene on Cu(111).
By Li Gao, J. Guest, N. Guisinger. Nano letters (Print), 2010
719 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/311e813402fa44676d3b9d2732c196d4538a7105
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD (2012, background): “The moiré pattern results from the small lattice mismatch between graphene and Cu(111) surface [44], and it also indicates sufficiently large graphene domain size.”
- Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation (2015, background): “This indicates that the growth of h-BN on Cu foil follows the edge-epitaxial growth mode [42], which may be benefited from the low pressure environment on the clean inner cavity of Cu enclosure.”
- Interaction between graphene and copper substrate: The role of lattice orientation (2014, background): “3 presence of Cu grain boundaries and transition between individual Cu lattice orientations, both of which largely affect the resulting graphene, epitaxial growth on surfaces with defined long-range crystalline order is particularly appealing [15, 18, 25-32].”
- Growth of Epitaxial Graphene: Theory and Experiment (2014, methodology): “[253] STM images of graphene grown on Cu(111) using CVD have been observed to form two different rotational domains which are rotated with respect to the Cu(111) lattice by 0◦ and 7◦, see Fig.”