Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
By I. Rozhansky, D. A. Zakheim. 2007
199 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b4fab5651d9387306ebc25b5e8f889ed29b012d4
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Materials Chemistry
Citations in the corpus
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “ond hypothesis that more directly attributes droop to carrier transport and injection limitations, without invoking Auger processes [60], [64].”
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “quantum well active region induced by electron leakage due to band structure modification by polarization related to the growth of GaN on c-plane substrates [63], [69]; poor carrier injection”