A Silicon 60-GHz Receiver and Transmitter Chipset for Broadband Communications

By Scott K. Reynolds, B. Floyd, Ullrich R. Pfeiffer, T. Beukema, J. Grzyb, C. Haymes, B. Gaucher, M. Soyuer. IEEE Journal of Solid-State Circuits, 2006

433 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b432db6b4659a20fc52168824427537012fbfdc1

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Citations in the corpus

Antenna-on-Chip and Antenna-in-Package Solutions to Highly Integrated Millimeter-Wave Devices for Wireless Communications (2009, methodology): “For example, Floyd et al. have demonstrated a 60-GHz fully integrated radio transmitter and receiver chipset in a 0.13- m silicon-germanium (SiGe) technology [ 21 ] and Wang et al. the 60-GHz fully integrated transmitter in a 0.18- m SiGe technology [22].”
A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications (2017, background): “Since the first publication of a Si-based phased-array IC in 2004 [18], and fully integrated millimeter-wave TX and RX ICs in 2006 [19], significant research in this area has resulted in improvements in frequency of operation, performance, and complexity.”
A Fully-Integrated 16-Element Phased-Array Receiver in SiGe BiCMOS for 60-GHz Communications (2010, methodology): “The frequency plan is similar to the sliding-IF super-heterodyne architecture in [1].”
State of the Art in 60-GHz Integrated Circuits and Systems for Wireless Communications (2011, background): “At such high carrier frequencies, the bandwidths become enormous, up to tens of gigahertz, allowing massive data rates between portable devices, telecommunication infrastructure equipment, and the cloud.”
Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio (2007, background): “While this temperature dependence is twice as large as that measured on 80 GHz LNAs and PAs implemented in a 290-GHz SiGe HBT technology [25], it is comparable to that of published 60-GHz SiGe BiCMOS circuits [ 4 ], [32].”