Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

By Y. Huai, F. Albert, P. Nguyen, M. Pakala, T. Valet. 2004

528 citations recorded by the source corpus.

The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1×0.2 μm2 and resistance–area product RA in the range of 0.5–10 Ω μm2 (ΔR/R=1%–20%). Current-induced magnetization switching is observed with a critical current density of about 8×106 A/cm2. The attribution of the switching to the spin-transfer effect is supported by a current-induced ΔR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer-induced switching in metallic multilayer systems.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b41ed5a6c0d010ab030c9b948084b8c6af16f3b6

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

In Materials Chemistry

Citations in the corpus

Electrical Detection of Magnetization Dynamics via Spin Rectification Effects (2016, background): “On the other hand, the magnetization in nano-structured magnetic multilayers patterned with a sub-micrometer lateral size can be reversed by a dc current [12, 13].”
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “Thanks to progress made in the growth of MTJ, particularly with regard to reducing the thickness of the oxide barrier while maintaining a large TMR amplitude, STT switching was obtained in MTJs (Fuchs et al., 2004; Huai et al., 2004).”
Measurement of the spin-transfer-torque vector in magnetic tunnel junctions (2007, unknown): “With the assumptions that G+− ≈ G−+ for a symmetric junction near zero bias and G−− G++, equations (4) and (5) imply that, approximately, dτ‖/dV ∝ (dI/dV )P.”
Interface-Induced Phenomena in Magnetism (2016, unknown): “, 2001] and then in magnetic tunnel junctions with low-resistance tunnel barriers [Huai et al., 2004; Fuchs et al., 2004; Sato et al., 2014].”