Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

By Ding Zhong, K. Seyler, X. Linpeng, R. Cheng, N. Sivadas, Bevin Huang, E. Schmidgall, Takashi Taniguchi, Kenji Watanabe, M. McGuire and 4 more. Science Advances, 2017

763 citations recorded by the source corpus.

A van der Waals heterostructure of monolayer WSe2 and ferromagnetic CrI3 enables exceptional control of valley pseudospin. The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe2 and the CrI3 magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b3d4579c6a07c3ceab030311d0a842a577d7413a

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Citations in the corpus

Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures (2018, methodology): “eV, roughly the electron affinity of CrI 3 . The spin-splitting 𝛥ആ in each quantum well is taken to be 0.5 eV, as estimated from the DFT calculated band structure of the ferromagnetic monolayer CrI 3 (5). Typical I t -V relations produced from this model, with a van der Waals barrier width B = 0.27”
Probing and controlling magnetic states in 2D layered magnetic materials (2019, neutral): “Here we briefly discuss two examples: one makes use of electrically switchable magnetization to realize a new type of spin transistors 128 , and the other uses the atomically flat surfaces of 2D magnets to induce magnetic proximity coupling to monolayer semiconductors 24 .”
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling (2018, background): “(2) Based on a similar calculation, we can calculate the equivalent ratio for a four layer CrI3 barrier: 456 478 = 09 ? + 0<9 ? 209 0<9 = .”
On the origin of magnetic anisotropy in two dimensional CrI3 (2017, neutral): “starting to be explored experimentally.[13]”
Magnetism, symmetry and spin transport in van der Waals layered systems (2021, neutral): “Fe3GeTe2 b P6m2 (187) τ τ τ × × ˆ + + + − ∇ m J z J ( ) m [J m m J (m m )/2] z x x y y x y m DL z ani 2 2”
Crystal and Magnetic Structures in Layered, Transition Metal Dihalides and Trihalides (2017, methodology): “Stable monolayer crystals of CrI3 have recently been demonstrated experimentally [21].”
Two-dimensional magnetic crystals and emergent heterostructure devices (2019, background): “Various material systems in which the proximity effect has been used to spin- or valley-polarize 2D materials include graphene on YIG (40), EuS on graphene (41), WSe2 on EuS (103), andWSe2 on CrI3 (104).”