Mechanical and electronic properties of monolayer MoS2 under elastic strain

By Q. Yue, Jun Kang, Zhengzheng Shao, Xueao Zhang, Shengli Chang, Guang Wang, S. Qin, Jingbo Li. 2012

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A Comparative Study of Electronic Properties of Bulk MoS2 and Its Monolayer Using DFT Technique: Application of Mechanical Strain on MoS2 Monolayer (2014, background): “A study on elastic constants and electronic structures of two-dimensional monolayer MoS2 under elastic strain using first principle calculations has been made [26].”
Graphene versus MoS2: A short review (2014, background): “The mechanical properties for both graphene and SLMoS2 have been extensively investigated [48–60].”
Modulation of electronic and mechanical properties of phosphorene through strain (2014, background): “, 335, 267, and 123 J/m2, respectively), implying that phosphorene is more flexible along both armchair and zigzag directions [19,22].”
Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits (2019, methodology): “rain. A straightforward method to achieve strain in 2D nanocrystals is through mechanical bending, such as transferring them onto flexible substrates or wrapping them around a pre-patterned structure [6, 7, 8, 9]. Under small (<2%) compressive (tensile) strain, the bandgap increases (decreases) a”