High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

By K. Mayes, A. Yasan, R. Mcclintock, D. Shiell, S. Darvish, P. Kung, Manijeh Razeghi. 2004

167 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/b3014f885fb833a3ae74653eb40824c6bf031065