Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors

By B. Kochman, A. Stiff-Roberts, S. Chakrabarti, Jamie Phillips, Sanjay Krishna, J. Singh, Pallab K. Bhattacharya. 2003

157 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Spectroscopy

View Paper: https://www.semanticscholar.org/paper/b25d93546b34727fbbee30645e59dd3a070aa63a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Subhananda Chakrabarti
2. A. Stiff-Roberts
3. P. Bhattacharya
4. S. Gunapala
5. S. Bandara
6. S. Kennerly
7. Sir Rafol

Citations in the corpus

• High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity (2004, background): “barriers, to take advantage of the large absorption coefficient in pyramidal InAs–GaAs quantum dots [8].”