Monolayer PtSe₂, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt.

By Yeliang Wang, Linfei Li, Wei Yao, Shiru Song, Jia-Tao Sun, Jinbo Pan, X. Ren, Chen Li, E. Okunishi, Yu‐qi Wang and 14 more. Nano letters (Print), 2015

615 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/b23eb3e0e7f3864a3b80cbcb24b825dd25e47ce8

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1. Mingzhe Yan
2. R. Villaos
3. E. Wang
4. C. Crisostomo
5. Xue Zhou
6. Zhi-Quan Huang
7. Shin-Ming Huang
8. Guangqi Zhang

Citations in the corpus

• Thickness dependent electronic properties of Pt dichalcogenides (2019, methodology): “It was found that the synthesized 1T-PtSe2 using the said method have potential applications for photocatalysis and valleytronics.(19) Furthermore, by using Raman characterization, it is possible to determine the thickness of few-layered 1T-PtSe2 fabricated through “direct selenization” technique.”
• High quality atomically thin PtSe2 films grown by molecular beam epitaxy (2017, background): “Our data of 1 ML PtSe2 film (figure 3(f)) match well with previous results on 1 ML PtSe2 film grown by direct selenization method [12], showing a semiconductor with the top of the valence bands at −1.”