Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate

By E. Rollings, G. Gweon, Shuyun Zhou, B. Mun, J. McChesney, B. S. Hussain, A. Fedorov, P. First, W. D. Heer, Alessandra Lanzara. 2005

408 citations recorded by the source corpus.

Abstract This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0 0 0 1) face of a 6H–SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level X-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b21b5200afdeaba9924d10a26d6ee52746c7e693

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Citations in the corpus

Synthesis and Fabrication of Graphene and Graphene Oxide: A Review (2019, methodology): “Mechanical cleaving (exfoliation) [4], chemical synthesis [30], chemical exfoliation [31] [32], epitaxial growth [33], and thermal chemical vapor deposition (CVD) [34] methods have been extensively studied.”
Towards low temperature thermal exfoliation of graphite oxide for graphene production (2013, background): “[30] Rollings E, Gweon GH, Zhou SY, Mun BS, McChesney JL, Hussain BS, et al.”
Synthesis of Graphene and Its Applications: A Review (2010, neutral): “82 Continued success of this process has attracted attention of the semiconductor industries, as this process may be a viable technique in post-CMOS age 9 , 15 , 82 , 83 , 84 ( Figure 8b shows SEM image of graphene grown epitaxially on SiC surface).”