Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements

By Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, Xiao-li Yuan, T. Sekiguchi. 2003

158 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b2047d8c4ab1eb7d8ba578b23d2a055a4dd7931e