Phosphorene oxides: Bandgap engineering of phosphorene by oxidation
By Angelo Ziletti, A. Carvalho, P. E. Trevisanutto, D. Campbell, D. Coker, A. C. Castro Neto. 2014
166 citations recorded by the source corpus.
We show that oxidation of phosphorene can lead to the formation of a new family of planar (two-dimensional) and tubular (one-dimensional) oxides and suboxides, most of them insulating. This confers to black phosphorus a native oxide that can be used as barrier material and protective layer. Furthermore, the bandgap of phosphorene oxides depends on the oxygen concentration, suggesting that controlled oxidation can be used as a means to engineer the bandgap. For the oxygen saturated composition, ${\mathrm{P}}_{2}{\mathrm{O}}_{5}$, both the planar and tubular phases have a large bandgap energy of about 8.5 eV and are transparent in the near UV. These two forms of phosphorene oxides are predicted to have the same formation enthalpy as ${\mathrm{O}}^{\ensuremath{'}}\text{\ensuremath{-}}{\mathrm{P}}_{2}{\mathrm{O}}_{5}$, the most stable of the previously known forms of phosphorus pentoxide.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b1fca6112fdaa5d08fcf6fdf1315c09f7038af0a
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In Materials Chemistry
- Yong‐Wei Zhang
- Gang Zhang
- Yongqing Cai
- Z. Ong
- K. Novoselov
- V. Sorkin
- A. C. Castro Neto
- A. Mishchenko
Citations in the corpus
- Recent Advances in the Study of Phosphorene and its Nanostructures (2017, methodology): “Higher concentration of oxygen results in the formation of phosphorene oxides with the planar and tubular structures (see Figure 26).(198) These phosphorene oxides can be either semiconductors or insulators (Eg»8 eV), depending on the oxygen concentration (see Figure 29b).”
- 2D materials and van der Waals heterostructures (2016, background): “, copper and cobalt layered oxides) (49, 50), passivating layers (phosphorus oxide) (51, 52), and other areas of technological interest.”