Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides
By T. Liang, Hon Ki Tsang. 2004
253 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b1ceb70db6a675f703d9d24d9d30287c588dccd4
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Biomedical Engineering
- Michal Lipson
- Bahram Jalali
- Y. Liu
- Martijn J. R. Heck
- D. Dimitropoulos
- Özdal Boyraz
- Varun Raghunathan
- Mario Paniccia
In Electrical and Electronic Engineering
In Materials Chemistry
- Michal Lipson
- Bahram Jalali
- Martijn J. R. Heck
- D. Dimitropoulos
- Sasan Fathpour
- Özdal Boyraz
- Varun Raghunathan
- Mario Paniccia
Citations in the corpus
- Silicon Photonics (2006, background): “No such behavior was observed at the secondary emission wavelength of 1135 nm that originates from the substrate [70]. electron localization in the nanocrystals, and the observations are highly dependent on how the sample was prepared, with some showing gain and others exhibiting pump-induced loss.”
- Nonlinear Optics in Doped Silica Glass Integrated Waveguide Structures (2008, background): “This result is extremely impressive, and is well above the threshold for silicon (Dulkeith et al., 2006; Liang & Tsang, 2004; Tsang & Liu, 2008), AlGaAs (Siviloglou et al., 2006), or even Chalcogenides (Nguyen et al., 2006).”
- All-optical efficient wavelength conversion using silicon photonic wire waveguide (2006, unknown): “In our waveguide, for example, the free-carrier lifetime was measured to be 700 ps, which is about 1/100 of those in conventional rib-type waveguides without reverse bias [5], [16]; therefore, carrier accumulation would be well sup-”
- Guiding, modulating, and emitting light on Silicon-challenges and opportunities (2005, background): “The Raman gain in silicon waveguides is limited by the freecarrier absorption [24], [26].”
- Nonlinear optical properties of silicon waveguides (2008, background): “It was only after the realization that free carriers generated by TPA were introducing losses greater than the Raman gain [37], as is shown in figure 6, that attention was paid to minimizing the build-up of free carriers to enable net optical gain in silicon waveguides.”
- Raman-based silicon photonics (2006, methodology): “be further reduced by application of a reverse-bias p-n junction [22], [23], [29], or by introduction of midgap states through high energy irradiation, and gold or platinum doping.”
- Optical amplification and lasing by stimulated Raman scattering in silicon waveguides (2006, methodology): “amplification using silicon waveguide in the optical communication wavelength band [39], [44].”
- Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering (2017, background): “The power in a waveguide is typically limited by the nonlinear absorption due to free carriers generated by twophoton absorption in indium phosphide [50] and silicon [51, 52], i.”